(Peer-Reviewed) An artificial neural network chip based on two-dimensional semiconductor
Shunli Ma 马顺利 ¹, Tianxiang Wu 吴天祥 ¹, Xinyu Chen 陈新宇 ¹, Yin Wang 王印 ¹, Hongwei Tang 唐宏伟 ¹, Yuting Yao ¹, Yan Wang ¹, Ziyang Zhu ², Jianan Deng 邓嘉男 ², Jing Wan 万景 ², Ye Lu 陆叶 ², Zhengzong Sun 孙正宗 ¹, Zihan Xu 许子寒 ³, Antoine Riaud ¹, Chenjian Wu 吴晨健 ⁴, David Wei Zhang 张卫 ¹, Yang Chai 柴扬 ⁵, Peng Zhou 周鹏 ¹, Junyan Ren 任俊彦 ¹, Wenzhong Bao 包文中 ¹
¹ State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
中国 上海 复旦大学微电子学院 专用集成电路与系统国家重点实验室
² State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai 200433, China
中国 上海 复旦大学信息科学与工程学院 专用集成电路与系统国家重点实验室
³ Shenzhen Sixcarbon Technology, Shenzhen 518106, China
中国 深圳 深圳六碳科技有限公司
⁴ School of Electronic and Information Engineering, Soochow University, Suzhou 215006, China
中国 苏州 苏州大学电子信息学院
⁵ Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
中国 香港 九龙红磡 香港理工大学应用物理系
Science Bulletin, 2021-10-05
Abstract
Recently, research on two-dimensional (2D) semiconductors has begun to translate from the fundamental investigation into rudimentary functional circuits. In this work, we unveil the first functional MoS₂ artificial neural network (ANN) chip, including multiply-and-accumulate (MAC), memory and activation function circuits.
Such MoS₂ ANN chip is realized through fabricating 818 field-effect transistors (FETs) on a wafer-scale and high-homogeneity MoS₂ film, with a gate-last process to realize top gate structured FETs. A 62-level simulation program with integrated circuit emphasis (SPICE) model is utilized to design and optimize our analog ANN circuit.
To demonstrate a practical application, a tactile digit sensing recognition was demonstrated based on our ANN circuits. After training, the digit recognition rate exceeds 97%. Our work not only demonstrates the protentional of 2D semiconductors in wafer-scale integrated circuits, but also paves the way for its future application in AI computation.
Recent progress on mid-infrared and terahertz dual-comb spectroscopy
Zhuoren Wan, Min Li, Binbin Liu, Yu Xia, Yuan Chen, Xiuxiu Zhang, Dongxu Zhu, Yan Dai, Sinan Tao, Hua Li, Ming Yan, Heping Zeng
Opto-Electronic Technology
2026-09-30
Electrically switchable bright-field and interference-synthesized edge-enhanced imaging with a polarization-multiplexed metalens
Xiaotong Li, Junhwa Seong, Yeseul Kim, Kwang-Suk Oh, Shiqi Hu, Le Dai, Harit Keawmuang, Beomha Yang, Minseok Choi, Youngsun Jeon, Cherry Park, Weiyan Li, Tianxu Jia, Han Zhu, Xiaodong Cai, Qi Zheng, Jinhui Shi, Young-Ki Kim, Yuchuan Shao, Trevon Badloe, Junsuk Rho
Opto-Electronic Science
2026-09-20
3D-printed copper water cooling system assisted fabrication of 10.6-μm high-power CO₂ laser resistance reflectors
Hongfei Jiao, Binbin Jiang, Xinshang Niu, Yifan Wang, Dongdong Li, Jun Yu, Xiaochuan Ji, Jingjing Xia, Jinlong Zhang, Xinbin Cheng, Zhanshan Wang
Opto-Electronic Advances
2026-09-15
Ultrafast all-optical modulation of wide-bandwidth pulses enabled by silicon-metasurfaces
Kaloyan Georgiev, Khosro Zangeneh Kamali, Anton A. Trifonov, Giulia Crotti, Lyuben Petrov, Stefan Georgiev, Hristo Iliev, Lei Xu, Unai Arregui Leon, Mohsen Rahmani, Giuseppe Della Valle, Ivan Buchvarov, Dragomir Neshev
Opto-Electronic Advances
2026-09-15
