(Peer-Reviewed) Unraveling the efficiency losses and improving methods in quantum dot-based infrared up-conversion photodetectors
Jiao Jiao Liu 刘交交, Xinxin Yang 杨鑫鑫, Qiulei Xu 徐秋蕾, Ruiguang Chang 苌瑞广, Zhenghui Wu 吴政辉, Huaibin Shen 申怀彬
Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng 475004, China
中国 开封 河南大学材料学院 特种功能材料教育部重点实验室 高效显示与照明技术国家地方联合工程研究中心
Opto-Electronic Science, 2024-04-24
Abstract
Quantum dot-based up-conversion photodetector, in which an infrared photodiode (PD) and a quantum dot light-emitting diode (QLED) are back-to-back connected, is a promising candidate for low-cost infrared imaging. However, the huge efficiency losses caused by integrating the PD and QLED together hasn’t been studied sufficiently. This work revealed at least three origins for the efficiency losses.
First, the PD unit and QLED unit usually didn’t work under optimal conditions at the same time. Second, the potential barriers and traps at the interconnection between PD and QLED units induced unfavorable carrier recombination. Third, much emitted visible light was lost due to the strong visible absorption in the PD unit.
Based on the understandings on the loss mechanisms, the infrared up-conversion photodetectors were optimized and achieved a breakthrough photon-to-photon conversion efficiency of 6.9%. This study provided valuable guidance on how to optimize the way of integration for up-conversion photodetectors.
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Opto-Electronic Advances
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