(Peer-Reviewed) Optical properties and applications of SnS₂ SAs with different thickness
Mengli Liu 刘孟丽 ¹, Hongbo Wu 吴宏博 ², Ximei Liu 刘茜美 ¹, Yaorong Wang 王耀荣 ¹, Ming Lei 雷鸣 ¹, Wenjun Liu 刘文军 ¹ ³, Wei Guo 郭伟 ², Zhiyi Wei 魏志义 ³
¹ State Key Laboratory of Information Photonics and Optical Communications, School of Science, P. O. Box 91, Beijing University of Posts and Telecommunications, Beijing 100876, China
中国 北京 北京邮电大学理学院 信息光子学与光通信国家重点实验室
² School of Physics, Beijing Institute of Technology, 5 South Zhongguancun Street, Beijing 100081, China
中国 北京 北京理工大学物理学院
³ Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
中国 北京 中国科学院物理研究所 北京凝聚态物理国家实验室
Opto-Electronic Advances, 2021-10-25
Abstract
Q-switched lasers have occupied important roles in industrial applications such as laser marking, engraving, welding, and cutting due to their advantages in high pulse energy. Here, SnS₂-based Q-switched lasers are implemented. Considering that SnS₂ inherits the thickness sensitive optical characteristics of TMD, three kinds of SnS₂ with different thickness are characterized in terms of nonlinearity and used to realize the Q-switched pulses under consistent implementation conditions for comparison tests.
According to the results, the influence of thickness variation on the nonlinear performance of saturable absorber, such as modulation depth and absorption intensity, and the influence on the corresponding laser are analyzed. In addition, compared with other traditional saturable absorbers, the advantage of SnS₂ in realizing ultrashort pulses is also noticed. Our work explores the thickness-dependent nonlinear optical properties of SnS₂, and the rules found is of great reference value for the establishment of target lasers.
Multiplexed stimulated emission depletion nanoscopy (mSTED) for 5-color live-cell long-term imaging of organelle interactome
Yuran Huang, Zhimin Zhang, Wenli Tao, Yunfei Wei, Liang Xu, Wenwen Gong, Jiaqiang Zhou, Liangcai Cao, Yong Liu, Yubing Han, Cuifang Kuang, Xu Liu
Opto-Electronic Advances
2024-07-05
